MBE growth method for high level devices and integrations
US5258327A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Apr 30, 1992 |
| Grant date | Nov 2, 1993 |
| Priority date | — |
| Expiry date | Apr 30, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/942
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming an epitaxial region on a semiconductor wafer substrate of III-V compound composition. After deposition of a dielectric mask, a seed layer that includes indium is evaporated over the wafer. A layer of III-V material is then deposited over the surface of the wafer by MBE growth. The seed layer acts to create uniformly distributed nucleation cites that are randomly spaced over the surface of the dielectric material and causes a reduction of the surface mobility of the atoms during the epitaxial growth process so that the residual polycrystalline material form atop the dielectric mark exhibits enhance surface morphology. As a result, the direct placement of interconnects on the polycrystalline material is achieve and the costly and time-consuming step of removing both the polycrystalline material and the dielectric mask of the prior art is avoided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.