Velocity modulation transistor
US5258632A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Aug 14, 1991 |
| Grant date | Nov 2, 1993 |
| Priority date | — |
| Expiry date | Aug 14, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/204
Abstract
A velocity modulation transistor has a first barrier layer, first channel layer, second barrier layer, second channel layer, third barrier layer, input/output electrode that and control electrode are laminated on a semi-insulative substrate in this order, The electron affinity of the first channel layer is larger than that of the second channel layer. The energy difference between the first level and the second level can be obtained according to the difference in the electron affinity between the first and second channel layers as well as to the control of the film thickness of the first and second channel layers, whereby the velocity modulation effect at room temperature becomes large.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.