Visible light surface emitting semiconductor laser
US5258990A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 7, 1991 |
| Grant date | Nov 2, 1993 |
| Priority date | — |
| Expiry date | Nov 7, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2302/00
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A vertical-cavity surface-emitting laser is disclosed comprising a laser cavity sandwiched between two distributed Bragg reflectors. The laser cavity comprises a pair of spacer layers surrounding one or more active, optically emitting quantum-well layers having a bandgap in the visible which serve as the active optically emitting material of the device. The thickness of the laser cavity is m .lambda./2n.sub.eff where m is an integer, .lambda. is the free-space wavelength of the laser radiation and n.sub.eff is the effective index of refraction of the cavity. Electrical pumping of the laser is achieved by heavily doping the bottom mirror and substrate to one conductivity-type and heavily doping regions of the upper mirror with the opposite conductivity type to form a diode structure and applying a suitable voltage to the diode structure. Specific embodiments of the invention for generating red, green, and blue radiation are described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.