Drying etching method
US5259922A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 14, 1991 |
| Grant date | Nov 9, 1993 |
| Priority date | — |
| Expiry date | Aug 14, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32137
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A dry etching method of a substrate or layer of a semiconductor or other material which includes the steps of providing a metallic chamber having an anode and a cathode which are spaced from each other and mounting the substrate or layer to be etched on the cathode, and applying a potential from a RF power supply to the cathode so that a plasma is generated between the anode and the cathode to produce a bulk region and sheath regions between the cathode and the anode. The frequency of the RF power supply is set at a level higher than 13.56 MHz under which the substrate or layer is subjected to etching with the ions. A polysilicon, SiN or Al alloy layer can be efficiently etched with a Cl-based etching gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.