Apparatus for producing silicon single crystal
US5260037A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Jun 26, 1992 |
| Grant date | Nov 9, 1993 |
| Priority date | — |
| Expiry date | Jun 26, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1068
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An apparatus and a method for producing a silicon single crystal by Czochralski method, whereby the silicon single crystal is pulled up from a crucible while the crucible is heated by a side heater in the lateral periphery of the crucible and a bottom heater facing the bottom of the crucible. The outputs of the side heater and bottom heater are controlled independently each other so that an oxygen concentration in the pull-up direction of the pulled-up silicon single crystal is rendered uniform. In addition to the output control of the heaters, a magnetic field is applied to a molten liquid in the crucible, so that, a dopant concentration in a radial direction of the pulled-up silicon single crystal is rendered uniform.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.