Method of making laser generated I. C. pattern for masking
US5260235A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 21, 1991 |
| Grant date | Nov 9, 1993 |
| Priority date | — |
| Expiry date | Aug 21, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/944
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An improved method of patterning layers on a semiconductor element by use of laser processing. A thin film of amorphous silicon is deposited on a fused quartz window. Selected regions of the amorphous silicon are crystallized by a laser beam focused through the quartz window. The non-crystallized silicon is removed forming an opaque layer of crystallized silicon in the desired pattern. The quartz window is used as a window to a reactive gas containment chamber containing semiconductor devices to be patterned. By irradiating the chamber with ultraviolet light through the patterned quartz window, the semiconductor element is etched in the regions exposed to the light.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.