Semiconductor device having reflecting layers made of varying unit semiconductors
US5260589A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Oct 31, 1991 |
| Grant date | Nov 9, 1993 |
| Priority date | — |
| Expiry date | Oct 31, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/814
Abstract
A semiconductor device having a reflecting layer consisting of unit semiconductors each consisting of two or more semiconductor films of different compositions. The thickness of the unit semiconductors varies continuously or in steps in the direction of thickness of the reflecting layer, preferably decreases in the direction toward the light incidence surface of the layer. For example, the reflecting layer has a varying-thickness portion whose unit semiconductors have a continuously varying thickness, and may include an iso-thickness portion whose semiconductors have the same thickness. The composition at the interface of the adjacent films preferably changes to mitigate a lattice mismatch which causes crystal defects of the layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.