Tapered semiconductor laser gain structure with cavity spoiling grooves
US5260822A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 31, 1992 |
| Grant date | Nov 9, 1993 |
| Priority date | — |
| Expiry date | Jan 31, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/125
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser gain structure having a tapered gain region comprising cavity spoilers for receiving light which is reflected off of the output facet back into the semiconductor and removing it from the gain region so as to reduce or eliminate self oscillation. The boundaries of the gain region are also designed to have a very low refractive index gradient so as to minimize reflection of light off of the boundaries back into the gain region. The gain structure may be embodied in a semiconductor laser oscillator or semiconductor laser amplifier depending on whether the input facet is or is not, respectively, anti reflection coated. The output facet is anti-reflection coated in either embodiment.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.