Plasma-chemical vapor-phase epitaxy system comprising a planar antenna
US5261962A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 3, 1992 |
| Grant date | Nov 16, 1993 |
| Priority date | — |
| Expiry date | Jun 3, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32229
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma-chemical vapor-phase epitaxy system or a chemical vapor deposition (CVD) system can produce a large thin film of good quality. The CVD system includes a vacuum container having a quartz glass window, a substrate disposed within the vacuum container as opposed to the window, an antenna type discharge electrode disposed outside of the vacuum container as opposed to the window, and a high-frequency power supply for feeding electric power to the same electrode. In this way, by disposing an electrode outside of a container and exciting the reaction gas with high-frequency electromagnetic waves, a large thin film of good quality can be formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.