Layer electrophotographic sensitive member comprising morphous silicon
US5262263A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 18, 1991 |
| Grant date | Nov 16, 1993 |
| Priority date | — |
| Expiry date | Jul 18, 2011 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03G5/08242
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention relates to an improvement of an electrophotographic sensitive member comprising an amorphous silicon photoconductive layer and an amorphous silicon carbide surface layer formed on said amorphous silicon photoconductive layer. An electrophotographic sensitive member with amorphous silicon as a photoconductive layer has been already practically used and a quantity thereof produced has been on the increase year by year. In this sensitive member, as a rule, in order to increase a surface hardness, a surface layer formed of amorphous silicon carbide has been formed. An electrophotographic sensitive member with such two layers as the fundamental layer structure improved in charge acceptance, residual electric potential, photosensitivy and the like by forming a carrier blocking layer containing boron, oxygen, nitrogen and the like in a quantity within a desired range between a substrate for use in a sensitive member and the amorphous silicon photoconductive layer has been provided. However, the above described sensitive member has shown problems in that a sufficiently high initial electric potential can not be obtained yet and an electric potential decayed until the …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.