Preparation of novel silicon-containing photoresists for use in IC microlithography
US5262500A · kind A · utility
5Cited by
3References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 23, 1991 |
| Grant date | Nov 16, 1993 |
| Priority date | — |
| Expiry date | Oct 23, 2011 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC08F2800/20
- WIPO fieldMacromolecular chemistry, polymers
- WIPO sectorChemistry
Abstract
Silicon containing copolymers are mixed with diazonaphthoquinone esters to give UV photoresists for use in microlithography on integrated circuits (IC). The copolymer structure has a thermally resistant group, N-(4-hydroxyphenyl)maleimide, and an oxygen plasma resistant group, para-trialkylsilylstyrene.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.