Thin film capacitor
US5262920A · kind A · utility
48Cited by
6References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 13, 1992 |
| Grant date | Nov 16, 1993 |
| Priority date | — |
| Expiry date | May 13, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
In a thin film capacitor in which a lower electrode,a dielectric film and an upper electrode are formed in order on a substrate, both the lower and upper electrodes are respectively formed with a first conductive layer made of Ti, Ta, Mo and W and a second conductive layer made of Pt, Pd, Rh and Al in this order from the substrate. In addition, a conductive metal oxide film such as made of PdO and others is formed, as required, at least between the lower electrode and the dielectric film or between the upper electrode and the dielectric film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.