Non-volatile memory device capable of storing multi-state data
US5262984A · kind A · utility
148Cited by
6References
13Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 28, 1989 |
| Grant date | Nov 16, 1993 |
| Priority date | — |
| Expiry date | Jul 28, 2009 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C7/1006
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The input data comprising binary data to be stored are converted into multi-state data. A voltage of a level based on the converted multi-state data is applied to a source region to perform write operation to a memory transistor. As a result, the threshold voltage of the transistor is set to a value corresponding to the potential of the source region. In read operation a drain current generated in the memory transistor is detected and the multi-state data corresponding to the current are obtained. These multi-state data are converted into binary data to be outputted as output data.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.