STM memory medium
US5266502A · kind A · utility
18Cited by
3References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 1, 1991 |
| Grant date | Nov 30, 1993 |
| Priority date | — |
| Expiry date | Apr 1, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/943
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An STM memory medium comprising a substrate whose surface is smooth or even, a first insulating layer formed at a predetermined depth in the substrate by implanting first ion atoms from the smooth surface of the substrate into it under a certain condition, and a second insulating layer formed adjacent to the first insulating layer and at another predetermined depth in the substrate by implanting second ion atoms from the smooth surface of the substrate into it under another certain condition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.