Method of forming trench buried wiring for semiconductor device
US5266526A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 19, 1992 |
| Grant date | Nov 30, 1993 |
| Priority date | — |
| Expiry date | Mar 19, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/10
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a trench buried wiring on a semiconductor device. The method includes the steps of: forming a trench in a first insulating film formed on a semiconductor substrate, by using as a mask a photoresist layer, the trench having substantially an upright step; depositing a first electrode material on the surface of the photoresist layer and on the bottom of the trench, while leaving the photoresist layer; removing the photoresist layer and the first electrode material on the photoresist layer while leaving the first electrode material only on the bottom of the trench; and filling a second electrode material in the trench to form a composite electrode with the second electrode material being superposed on the first electrode material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.