Focused ion beam for thin film resistor trim on aluminum nitride substrates
US5266529A · kind A · utility
10Cited by
2References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 21, 1991 |
| Grant date | Nov 30, 1993 |
| Priority date | — |
| Expiry date | Oct 21, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/321
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method for trimming thin film resistors. A focused inert ion beam is employed to selectively remove portions of a resistive film deposited on a substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.