Self-aligned gallium arsenide/aluminum gallium arsenide collector-up heterojunction bipolar transistors capable of microwave applications and method
US5266819A · kind A · utility
24Cited by
1References
16Claims
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Key dates
| Filing date | May 13, 1991 |
| Grant date | Nov 30, 1993 |
| Priority date | — |
| Expiry date | May 13, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/852
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A C-up HBT is made to operate in the microwave/millimeter frequency range by self-aligning the collector uprisers on the base relative to proton damaged emitter regions and the base contacts which minimizes carrier injection into the extrinsic base. The use of about 7-10% indium in the indium gallium arsenide base is sufficient to stop the FREON-12 etch at the base after totally etching through the collector and single self-aligning mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.