Multi-valued memory cell using bidirectional resonant tunneling diodes
US5267193A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Apr 21, 1992 |
| Grant date | Nov 30, 1993 |
| Priority date | — |
| Expiry date | Apr 21, 2012 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5614
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A memory cell for multi-valued logic utilizing bidirectional folding V-I characteristics. Two devices with bidirectional multiple folding characteristics, such as the V-I characteristics of resonant tunneling diodes, are connected in series across a power supply. Multiple stable operating points are established where the positive resistance portions the folding characteristics interesect and can be used to store multiple levels of signal. With bidirectional folding characteristics, the number of operating points can be doubled by using both a positive power supply and a negative power supply. The signal can be written in and read out at the connecting point of the two devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.