Method for manufacturing a photosensor
US5268309A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 22, 1991 |
| Grant date | Dec 7, 1993 |
| Priority date | — |
| Expiry date | Nov 22, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/103
Abstract
Disclosed is a photo sensor in which a photoelectric converter having a P-N junction and an amplifying section having a bipolar transistor to amplify an output of this converter are integrally formed in a semiconductor substrate. The input stage of the amplifying section has an insulating gate type transistor, and the output of the photoelectric converter is inputted to the gate electrode of this transistor. The photosensing surface of the photoelectric converter is covered by a transparent ptotection film, and a thickness of this film is determined so as to make the reflection factor of the incident light at the photo sensing surface of the photoelectirc converter zero. In manufacturing of this photo sensor, the base region of the bipolar transistor and one region of the P-N junction of the photoelectric converter of the same conductivity type as the base region are simultaneously formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.