Method for making a mesa type PIN diode
US5268310A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 25, 1992 |
| Grant date | Dec 7, 1993 |
| Priority date | — |
| Expiry date | Nov 25, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/30105
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A mesa-type PIN diode and method for making same are disclosed. A diode made according to the present invention includes a junction formed in the top surface of the mesa-shaped structure, having an area that is less than (and preferrably, approximately half) the area of the top surface. A highly-doped, N-type conducting layer is formed in the side-walls of the mesa-shaped structure. The resulting diode is subject to greatly reduced charge carrier recombination effects and suffers from much less carrier-to-carrier scattering than conventional diodes. Thus, a diode made according to the present invention is capable of achieving much higher stored charge, lower resistance, lower capacitance, better switching characteristics, and lower power consumption than one made according to the prior art. Particular utility is found, inter alia, in the areas of high-frequency microwave and monolithic circuits.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.