Method of fabricating a semiconductor laser
US5268328A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 16, 1992 |
| Grant date | Dec 7, 1993 |
| Priority date | — |
| Expiry date | Dec 16, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/32325
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of fabricating a semiconductor laser includes successively forming on a semiconductor substrate by crystal growth an active waveguide comprised of a compound semiconductor comprising a Group V element phosphorus, a thin-film layer comprised of a first-conductivity type compound semiconductor comprising a Group V element arsenic and a current blocking layer comprised of a second-conductivity type compound semiconductor comprising a Group V element arsenic. A mask is formed for selectively etching the current blocking layer in the form of a stripe. A buffer-etching step is formed on both the current blocking layer and the mask to expose a surface of the current blocking layer and the thin-film layer, the surface including a Group V element arsenic. An outer cladding layer comprising a first-conductivity type compound semiconductor having a Group V element arsenic is formed on the current blocking layer and the thin-film layer in an atmosphere having a Group V element arsenic. The method has characteristic features including carrying out the crystal growth only twice, minimizing the movement of impurities in crystals, regrowing the interface with a very little defect and form…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.