Semiconductor structure for electrostatic discharge protection
US5268588A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Sep 30, 1992 |
| Grant date | Dec 7, 1993 |
| Priority date | — |
| Expiry date | Sep 30, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/601
Abstract
A semiconductor structure (30) is provided for electrostatic discharge protection. A first bipolar transistor (Q1) has a collector electrically coupled to a first node (12), a base electrically coupled to a second node, and an emitter electrically coupled to a third node (14). A second bipolar transistor (Q2) has a collector, a base electrically coupled to the second node, and an emitter electrically coupled to the first node (14). The second bipolar transistor (Q2) supplies a base current to the base of the first bipolar transistor (Q1) in response to the first node (12) reaching a threshold voltage relative to the third node (14), so that the first bipolar transistor (Q1) conducts current between the first (12) and third (14) nodes in response to the base current.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.