Method and apparatus for fabrication of thin film semiconductor devices using non-planar, exposure beam lithography
US5269882A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Dec 31, 1991 |
| Grant date | Dec 14, 1993 |
| Priority date | — |
| Expiry date | Dec 31, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/949
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An apparatus and method for the nonplanar treatment of a volumetric workpiece or substrate utilizing exposure beam lithography are disclosed. The method includes supplying one or more layers of one or more semiconductor materials to surfaces of the substrate, applying a resist over the semiconductor layers, setting the resist, and then directing an exposure beam, such as an electron beam, toward the substrate. The substrate is then moved in at least two degrees freedom of movement, relative to the beam, with one degree of freedom of movement being the rotating of the substrate about an axis generally perpendicular to the beam. The other degree of freedom of movement could be moving the substrate linearly in a direction generally parallel to the axis. By such movement, the resist is exposed to the beam in a predetermined pattern. The exposed resist is then developed and a layer or layers under the exposed resist are etched. The remaining resist is then removed yielding the desired semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.