Boron nutride membrane in wafer structure
US5270125A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 25, 1991 |
| Grant date | Dec 14, 1993 |
| Priority date | — |
| Expiry date | Oct 25, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24777
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A laminated structure includes a wafer member with a membrane attached thereto, the membrane being formed of substantially hydrogen-free boron nitride having a nominal composition B.sub.3 N. The structure may be a component in a mechanical device for effecting a mechanical function, or the membrane may form a masking layer on the wafer. The structure includes a body formed of at least two wafer members laminated together with a cavity formed therebetween, with the boron nitride membrane extending into the cavity so as to provide the structural component such as a support for a heating element or a membrane in a gas valve. In another aspect borom is selectively diffused from the boron nitride into a <100> surface of a silicon wafer. The surface is then exposed to EDP etchant to which the diffusion layer is resistant, thereby forming a channel the wafer member with smooth walls for fluid flow.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.