Deep submicron transistor fabrication method
US5270234A · kind A · utility
37Cited by
5References
32Claims
0Family size
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Inventors
Key dates
| Filing date | Oct 30, 1992 |
| Grant date | Dec 14, 1993 |
| Priority date | — |
| Expiry date | Oct 30, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/113
Abstract
A deep submicron transistor fabrication method that employs only optical lithography involves the formation of a relatively wide aperture using optical techniques; the formation of composite sidewalls having differential etch resistance in the aperture to define a final aperture width less than that available with conventional optical techniques; the etching of the final aperture to expose a controlled channel length; the implantation of the channel through the aperture; and the implantation of source and drain with the sidewalls protecting previously doped LDD regions in the active area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.