Curing and passivation of spin on glasses by a plasma process wherein an external polarization field is applied to the substrate
US5270267A · kind A · utility
89Cited by
4References
27Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 19, 1991 |
| Grant date | Dec 14, 1993 |
| Priority date | — |
| Expiry date | Nov 19, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02282
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of producing insulating layers over a semiconductor substrate comprising spinning a film of spin-on-glass (SOG) over a semiconductor substrate, precuring the film of SOG at an elevated temperature sufficient to remove the bulk of solvent and curing the film of SOG in a plasma in a plasma reactor of a type exhibiting a self-biased R.sub.F discharge adjacent the SOG for a period of time sufficient to exclude the bulk of SiOH, organic volatiles and H.sub.2 O from the layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.