Method for the formation of high temperature semiconductors
US5270292A · kind A · utility
4Cited by
2References
14Claims
0Family size
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Key dates
| Filing date | Feb 25, 1991 |
| Grant date | Dec 14, 1993 |
| Priority date | — |
| Expiry date | Feb 25, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S505/739
Abstract
Improved superconducting materials with high maximum magnetization, remanent magnetization and diamagnetic susceptibility can be made by enriching the base Y-Ba-Cu-O composition, Y:Ba:Cu=1:2:3, with respect to Y, or adding other trivalent or pentavalent elements (e.g. rare earths, Nb) to this composition. The mixed oxide materials are heated to melt a substantial fraction of their weight, quenched to a low temperature, re-heated to a temperature lower than the one initially used to effect melting, and annealed by slow cooling under air or oxygen.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.