High isolation integrated switch circuit
US5272457A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 10, 1992 |
| Grant date | Dec 21, 1993 |
| Priority date | — |
| Expiry date | Mar 10, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01P1/15
- WIPO fieldTelecommunications
- WIPO sectorElectrical engineering
Abstract
A high isolation broadband switching circuit includes a plurality of switching elements coupled in series alternatingly with transmission line segments. Each switching element has a low or very high impedance between first and second points responsive to first and second values of a control voltage, respectively. In a first embodiment, the switching element includes a PIN diode having a cathode coupled to a first transmission line and an anode coupled to a second transmission line. In a second embodiment, the switching element includes a field effect transistor (FET) having a drain coupled to a first transmission line and a source coupled to a second transmission line. A first resistor is coupled between the drain and the source for DC continuity between the drain and the source, and a second resistor coupled between a gate of the FET and ground for DC continuity. A bias voltage source is coupled through a resistor to one of a source and a drain of one of the FETs. A bias voltage propagates through each transmission line and each first resistor, so DC continuity is provided. The bias voltage has a first value which causes the switching elements to have a low impedance to place the …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.