Programmable semiconductor antifuse structure and method of fabricating
US5272666A · kind A · utility
86Cited by
11References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 18, 1991 |
| Grant date | Dec 21, 1993 |
| Priority date | — |
| Expiry date | Oct 18, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D48/381
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A programmable semiconductor antifuse structure and method of fabricating are provided which allow for miniaturization of components to an area of less than one micron. The cell exhibits a high pre-programmed resistance of more than 1.times.10.sup.7 ohms and has an extremely low programmed cell resistance of around 50 ohms.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.