Process for selectively depositing copper aluminum alloy onto a substrate
US5273775A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 13, 1992 |
| Grant date | Dec 28, 1993 |
| Priority date | — |
| Expiry date | Apr 13, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28562
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An improved method is provided for depositing a thin copper aluminum alloy film on a patterned silicon substrate. A copper base layer conforming to the existing pattern is initially formed on the surface of the substrate, followed by contact with vapors of an aminealane compound, which causes aluminum to be selectively deposited on the copper base layer portion of the substrate. Preferably, copper is applied to a diffusion barrier surface such as tungsten using chemical vapor deposition from a complex of copper (I) perfluoroalkyl-.beta.-diketonate and an olefin or silylolefin. The entire process of developing an alloy film can be carried out without exceeding 200.degree. C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.