Mask repair
US5273849A · kind A · utility
11Cited by
6References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 12, 1992 |
| Grant date | Dec 28, 1993 |
| Priority date | — |
| Expiry date | Mar 12, 2012 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/74
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Repair of transparent errors in masks utilized for lithographic processes in the manufacture of devices is accomplished by a particularly expedient procedure. In this procedure a metal ion beam such as a gallium ion beam is directed to the region that is to be repaired. An organic gas, including a material having an aromatic ring with an unsaturated substituent, is introduced into this region. The interaction of the gas with the ion beam produces an opaque adherent deposit. The resolution for this deposition is extremely good and is suitable for extremely fine design rules, e.g., 1 .mu.m and below.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.