Chromeless phase-shift mask and method for making
US5273850A · kind A · utility
14Cited by
1References
10Claims
0Family size
Assignee
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Key dates
| Filing date | Nov 4, 1991 |
| Grant date | Dec 28, 1993 |
| Priority date | — |
| Expiry date | Nov 4, 2011 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/34
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method is provided for forming a right angle (30) on a chromeless phase-shift mask (31). A first phase-shift element (32) and a second phase-shift element (33) are positioned at a ninety degree angle, on the chromeless phase-shift mask (31), wherein there is a predetermined space (34) between the first and second phase-shift elements (32,33). The space between the phase-shift elements eliminates hot spot formation that causes unintentional exposure of the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.