Process for stabilizing spent silicon contact mass
US5274158A · kind A · utility
5Cited by
4References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 13, 1992 |
| Grant date | Dec 28, 1993 |
| Priority date | — |
| Expiry date | Apr 13, 2012 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC07F7/16
- WIPO fieldOrganic fine chemistry
- WIPO sectorChemistry
Abstract
A method is provided for passivating spent silicon contact mass by treating the spent silicon contact mass at a temperature in range of from 900.degree. C. to 1500.degree. C. in an inert atmosphere.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.