Superconducting field effect devices with thin channel layer
US5274249A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 20, 1991 |
| Grant date | Dec 28, 1993 |
| Priority date | — |
| Expiry date | Dec 20, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S505/702
Abstract
A superconducting field effect device includes a substrate with an epitaxial superconducting film upon it and an insulating layer above a thinner region of the film which protects the film from the atmosphere and isolates it from a gate electrode which is on the insulating layer above a channel region of the thin film, and the epitaxial film has thicker regions suitable for contact to source and drain electrodes. Gate electrodes may be isolated from and oppose both sides of the superconducting thin regions so that enhanced modulation of a current in the thin region is provided. The invention provides high speed and high efficiency switches and modulators.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.