Ohmic contact for p-type group II-IV compound semiconductors
US5274269A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 15, 1991 |
| Grant date | Dec 28, 1993 |
| Priority date | — |
| Expiry date | May 15, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8162
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A ZnSe semiconductor device includes a ZnSe pn junction having p-type and n-type layers, and an ohmic contact to both layers. The ohmic contact to the p-type layer includes a p-type ZnSe crystalline semiconductor contact layer, and a conductive electrode layer characterized by a Fermi energy. The contact layer is doped with nitrogen shallow acceptors, characterized by a shallow acceptor energy, to a net acceptor concentration of at least 5.times.10.sup.17 cm.sup.-3. The contact layer also includes sufficient deep energy states between the shallow acceptor energy and the electrode layer Fermi energy to enable cascade tunneling by charge carriers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.