Rotation rate sensor
US5275047A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 12, 1991 |
| Grant date | Jan 4, 1994 |
| Priority date | — |
| Expiry date | Sep 12, 2011 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01C19/5755
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A rotation rate sensor has a multi-layer structure, with an oscillatory body (13) formed in one carrier layer (10). The body can be stimulated to oscillate in a first oscillation direction (1). On top of this body (13), a further structural element (21), which is deflectable normal to the major surface of the carrier (10) and which serves to detect Coriolis acceleration, is located. There is a device for capacitive or piezo-resistive measurement of the deflection of the structural element. Preferably, the entire structure is fabricated from a silicon wafer, so that the measurement device can be integrated onto the sensor element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.