Patent · US Expired

Rotation rate sensor

US5275047A · kind A · utility

41Cited by
3References
12Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 12, 1991
Grant dateJan 4, 1994
Priority date
Expiry dateSep 12, 2011

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG01C19/5755
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A rotation rate sensor has a multi-layer structure, with an oscillatory body (13) formed in one carrier layer (10). The body can be stimulated to oscillate in a first oscillation direction (1). On top of this body (13), a further structural element (21), which is deflectable normal to the major surface of the carrier (10) and which serves to detect Coriolis acceleration, is located. There is a device for capacitive or piezo-resistive measurement of the deflection of the structural element. Preferably, the entire structure is fabricated from a silicon wafer, so that the measurement device can be integrated onto the sensor element.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.