Monocrystal growth method
US5275688A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 19, 1992 |
| Grant date | Jan 4, 1994 |
| Priority date | — |
| Expiry date | May 19, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S117/902
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A monocrystal of a R-T intermetallic compound containing R (at least one lanthanide element inclusive of Y) and T (at least one transition metal element such as Fe, Co, Ni, Cr and Mn) is grown by a solid phase method. First a precursor in which a primary phase of the intermetallic compound and a low-melting eutectic crystal phase exist is prepared. The precursor is successively heated from one end to another end while it is often contacted at one end with a seed crystal. Then the low-melting eutectic crystal phase functions as a flux intergranular substance to ensure the consistent manufacture of a monocrystal aligned with the crystallographic orientation of the seed crystal or at the start-of-heating point.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.