Process for generating beveled edges
US5275695A · kind A · utility
36Cited by
7References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 18, 1992 |
| Grant date | Jan 4, 1994 |
| Priority date | — |
| Expiry date | Dec 18, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32139
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Improved processes for generating a structure having beveled edges are presented. In a preferred embodiment, two photoresist layers are successively deposited on top of the target material, e.g., a metallization film. The intermediate photoresist layer is developed beyond the lithographically delineated boundaries of the top photoresist layer, forming deep recesses. These recesses remain unchanged during the subsequent etching step, resulting in pre-defined edge profiles in the target material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.