Method for producing diamond films
US5275798A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Oct 29, 1992 |
| Grant date | Jan 4, 1994 |
| Priority date | — |
| Expiry date | Oct 29, 2012 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/274
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Disclosed is a method for the production of diamond films, which comprise introducing a diamond-forming gas into a reaction chamber in which a substrate is located, activating the gas in the reaction chamber and depositing diamond on the substrate by decomposition of the gas, wherein the diamond-forming gas is a gas or gas mixture containing hydrogen, oxygen and carbon atoms at an atomic ratio satisfying requirements represented by the following formulae: EQU 2.gtoreq.C/H.gtoreq.0.0005, and EQU 4.gtoreq.O/C.gtoreq.0.0005.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.