Low reverse junction breakdown voltage zener diode for electrostatic discharge protection of integrated circuits
US5276350A · kind A · utility
19Cited by
9References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 16, 1992 |
| Grant date | Jan 4, 1994 |
| Priority date | — |
| Expiry date | Jun 16, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A zener diode with a low reverse breakdown avalanche voltage and the use of zener diode in electrostatic discharge protection circuit is described herein. The low breakdown avalanche voltage is achieved by creating a zener diode with a lightly doped region between the P+ and N+ zones. Zener diode disclosed herein is particularly useful in protection circuits for integrated circuits having features or sizes of one micron or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.