2-D monolithic coherent semiconductor laser array
US5276700A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 12, 1992 |
| Grant date | Jan 4, 1994 |
| Priority date | — |
| Expiry date | Mar 12, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/42
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
This invention discloses a semiconductor laser incorporating a plurality of resonant optical waveguide array cells. In each of the resonant optical waveguide array cells, leaky waveguide elements are coupled together such that radiation leaked from one antiguide element is coupled with radiation propagating along another antiguide element across an interelement region. As the radiation propagates through the array it is reflected at each end of the array until it builds up enough optical gain to reach lasing threshold. Then, radiation is leaked from the sides of each array such that this radiation can impinge other resonant optical waveguide arrays and be coupled with these arrays in phase to develop a laser beam having a higher intensity than can be achieved with a single array semiconductor laser.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.