Capacitive pressure sensor and method of manufacturing the same
US5277068A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 4, 1991 |
| Grant date | Jan 11, 1994 |
| Priority date | — |
| Expiry date | Oct 4, 2011 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01L9/0072
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
In a capacitive pressure sensor and a method of manufacturing the same, first and second grooves are formed in one and the other surfaces of a substrate, respectively. A first sacrificial layer is embedded in the first groove. First insulating films are formed on the substrate in which the first sacrificial layer is formed. The first insulating films have a first film electrode stacked therebetween. A second sacrificial layer having a predetermined shape is stacked on the first insulating film. Second insulating films are formed on the first insulating film on which the second sacrificial layer is formed. The second insulating films have a second film electrode stacked therebetween. A pressure introducing hole is formed in the second groove formed in the other surface of the substrate to reach the first sacrificial layer. First and second hollow portions are formed by removing the first and second sacrificial layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.