Patent · US Expired

Method for manufacturing field emission display

US5277638A · kind A · utility

57Cited by
2References
6Claims
0Family size

Assignee

Inventor

Key dates

Filing dateDec 15, 1992
Grant dateJan 11, 1994
Priority date
Expiry dateDec 15, 2012

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01J9/025
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

A field emission display FED is manufactured by a method for manufacturing the FED comprising the steps of forming successively a conductive coating and first photoresist coating on a transparent insulating substrate; exposing the first photoresist coating to the light and removing it except a part where a microtip is formed; etching in a predetermined depth the conductive coating using the first photoresist pattern as a mask to form a plurality of columns; depositing an insulating coating on the etched and exposed conductive coating and removing the remaining first photoresist pattern by a lift off method; depositing and patterning a second photoresist coating on the exposed column and the insulating coating to form a second photoresist pattern in order that the thickness of the remaining second photoresist coating becomes smaller than that of the exposed column; etching the column through a selective isotropic or anisotropic etching process using the second photoresist pattern as the mask to form the sharp end of the microtip; and depositing a gate layer on the insulating coating and removing the remaining second photoresist pattern. As a result, the end of the microtip is formed…

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.