Method for forming semiconductor thin film
US5278093A · kind A · utility
170Cited by
8References
25Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 29, 1992 |
| Grant date | Jan 11, 1994 |
| Priority date | — |
| Expiry date | Jul 29, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/154
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a semiconductor thin film comprises crystallizing an amorphous silicon thin film by a first thermal treatment at 700.degree. C. or lower for ten hours or longer and carrying out a second thermal treatment at 1200.degree. C. or higher in which a lamp light is radiated to the crystallized thin film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.