Method for self-aligned polysilicon contact formation
US5278098A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 3, 1992 |
| Grant date | Jan 11, 1994 |
| Priority date | — |
| Expiry date | Sep 3, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A polycrystalline silicon layer is deposited and patterned to define a level of interconnect. Contact openings to lower conductive layers are then defined and patterned. A refractory metal such as tungsten is selectively deposited over the device, so that it adheres to the polycrystalline silicon in the interconnect leads and silicon of the lower conductive layer which is exposed in the contact openings. This provides a low resistance interconnect, and good, metal, contacts to underlying layers. Shared contacts between two or more polycrystalline silicon interconnect layers and in underlying conductive layers such as a substrate are easily formed using this technique.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.