Method for manufacturing a semiconductor device having wiring electrodes
US5278099A · kind A · utility
43Cited by
6References
12Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 16, 1992 |
| Grant date | Jan 11, 1994 |
| Priority date | — |
| Expiry date | Nov 16, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device of the invention has a p.sup.+ -type silicon source region, an insulating film formed on the source region and having a contact hole, and a wiring electrode connected to the source region through the contact hole. The wiring electrode has a Ti layer formed on the insulating film and an exposed surface of the source region, a TiN layer formed on the Ti layer, and an Al layer formed on the TiN layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.