Diamond rectifying contact with undoped diamond layer

US5278431A · kind A · utility

Assignee

• Kobe Development Corporation · US

Inventor

• Kalyankumar Das · Raleigh, US

Key dates

• Filing date: Feb 23, 1993
• Grant date: Jan 11, 1994
• Expiry date: Feb 23, 2013

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/252

Abstract

A rectifying contact includes a first semiconducting diamond layer, a second undoped diamond layer on the first layer, and a third relatively highly doped diamond layer on the second layer. The first semiconducting diamond layer may be formed on a supporting substrate. A bonding contact is preferably formed on the third relatively highly doped diamond layer for facilitating electrical connection thereto. The bonding contact is preferably a titanium carbide/gold bilayer. In one embodiment, an ohmic contact may be formed on the first semiconducting diamond layer by an electrically conductive substrate and an associated metal layer on an opposite side of the substrate from the semiconducting diamond layer. In another embodiment, an ohmic contact may be formed on the first semiconducting diamond layer by a fourth relatively highly doped diamond layer and an associated bonding contact on the fourth diamond layer. The relatively highly doped diamond layers may be formed by ion implantation, annealing, and an etch of a graphitized surface portion of the implanted diamond layers.