Non-volatile memory
US5278784A · kind A · utility
13Cited by
2References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 24, 1992 |
| Grant date | Jan 11, 1994 |
| Priority date | — |
| Expiry date | Nov 24, 2012 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C17/16
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A non-volatile programmable memory having: PA1 a plurality of unit cells disposed therein, each of said unit cells including an anti-fuse that can write in data by electrically breaking down an insulating film, a select transistor individually connected to said anti-fuse, and a wiring connected to each anti-fuse; and PA1 an auxiliary transistor connected between mutually adjacent unit cells, said auxiliary transistor having a source region and a drain region respectively connected between said anti-fuse and said select transistor together incorporated in mutually adjacent unit cells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.