Plasma reactor for processing substrates comprising means for inducing electron cyclotron resonance (ECR) and ion cyclotron resonance (ICR) conditions
US5279669A · kind A · utility
248Cited by
11References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 13, 1991 |
| Grant date | Jan 18, 1994 |
| Priority date | — |
| Expiry date | Dec 13, 2011 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB01J2219/0894
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma reactor for forming a dense plasma from a gas is described incorporating a housing, a gas inlet to the housing, a pump for evacuating the housing, a magnetic coil to generate a magnetic field in the housing, a radio frequency power supply, an electrode or induction coil in the housing, a microwave power supply. The invention overcomes the problem of an upper plasma density limit independent of increases in microwave power by inducing electron cyclotron resonance (ECR) and ion cyclotron resonance (ICR) conditions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.