Multi-layered photovoltaic element having at least three unit cells
US5279679A · kind A · utility
36Cited by
8References
1Claims
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Key dates
| Filing date | Feb 21, 1992 |
| Grant date | Jan 18, 1994 |
| Priority date | — |
| Expiry date | Feb 21, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
A multi-layered photovoltaic element obtained by stacking at least three cells for photovoltaic generation. A second cell formed adjacent to a light incident-side cell and adapted to receive light which has passed through the light incident-side cell includes an i-type semiconductor layer having a band gap falling within a range of 1.45 eV to 1.60 eV. The i-type semiconductor layer consists essentially of a silicon-germanium-containing amorphous material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.